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Monolithically integrated planar front-end photoreceivers with 0.25 μm gate pseudomorphic In0.50Ga0.40As/In0.52Al0.48As/Inp modulation-doped field-effect transistors
Lai,R. et al.
Electronics Letters(1991),27(4):364
http://dx.doi.org/10.1049/el:19910230

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