Institution of Engineering and Technology

The IET is a world leading professional organisation sharing and advancing knowledge to promote science, engineering and technology across the world.

Si-induced enhancement of ohmic performance of Ti∕Al∕Mo∕Au metallisation for AlGaN∕GaN HEMTs
F.M. Mohammed
Electronics Letters(2005),41(17):984
http://dx.doi.org/10.1049/el:20051849

This article is available from multiple sources. Please click on the logo of the service to which you have a subscription, or click any logo to obtain pay-per-view access.

IET Digital Library on Scitation
  Access the IET Digital Library



IEL on IEEE Xplore
  Access the IEL (IEEE/IET Electronic Library) on IEEE Xplore®