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Fabrication of high aspect ratio silicon micro-tips for field emission devices

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Abstract

The evolution of higher order {221} and {331} crystal planes during corner undercutting in the anisotropic etching of (100) silicon is discussed, and the occurrence of highly vertical (72.5°) {311} planes unique to KOH etches are demonstrated. Using a combined etching technique, very high aspect ratio micro-tips are formed and their distinct advantages for vacuum microelectronics and field-emission devices (FED) are described.

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Authors and Affiliations

  1. Microelectronics Centre, Department of Electronic Engineering, University of South Australia, The Levels South Australia, 5095, Australia

    In Jae Chung

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  1. In Jae Chung
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  2. D. B Murfett
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  3. A Hariz
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  4. M. R Haskard
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Chung, I.J., Murfett, D.B., Hariz, A. et al. Fabrication of high aspect ratio silicon micro-tips for field emission devices. Journal of Materials Science 32, 4999–5003 (1997). https://doi.org/10.1023/A:1018692711614

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  • DOI: https://doi.org/10.1023/A:1018692711614

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