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Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s - 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.

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Authors and Affiliations

  1. Moscow State Pedagogical University, st. Malaya Pirogovskaya 1, Moscow, 119991, Russia

    E. L. Shangina, K. V. Smirnov, D. V. Morozov, V. V. Kovalyuk, G. N. Gol’tsman & A. A. Verevkin

  2. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Blvd. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia

    A. I. Toropov

Authors
  1. E. L. Shangina
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  2. K. V. Smirnov
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  3. D. V. Morozov
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  4. V. V. Kovalyuk
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  5. G. N. Gol’tsman
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  6. A. A. Verevkin
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  7. A. I. Toropov
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Corresponding author

Correspondence to E. L. Shangina.

Additional information

Original Russian Text © E.L. Shangina, K.V. Smirnov, D.V. Morozov, V.V. Kovalyuk, G.N. Gol’tsman, A.A. Verevkin, A.I. Toropov, 2010, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2010, Vol. 74, No. 1, pp. 110-112.

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Shangina, E.L., Smirnov, K.V., Morozov, D.V. et al. Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures. Bull. Russ. Acad. Sci. Phys. 74, 100–102 (2010). https://doi.org/10.3103/S1062873810010272

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  • DOI: https://doi.org/10.3103/S1062873810010272

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