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Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons

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Abstract

The temperature and concentration dependences of the frequency bandwidth of terahertz heterodyne AlGaAs/GaAs detectors based on hot electron phenomena with phonon cooling of two-dimensional electrons have been measured by submillimeter spectroscopy with a high time resolution. At a temperature of 4.2 K, the frequency bandwidth at a level of 3 dB (f 3 dB) is varied from 150 to 250 MHz with a change in the concentration n s according to the power law f 3dB ∝ n −0.5 s due to the dominant contribution of piezoelectric phonon scattering. The minimum conversion loss of the semiconductor heterodyne detector is obtained in structures with a high carrier mobility (μ > 3 × 105 cm2 V−1 s−1 at 4.2 K).

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Authors and Affiliations

  1. Moscow State Pedagogical University, 119991, Moscow, Russia

    E. L. Shangina, K. V. Smirnov, D. V. Morozov, V. V. Kovalyuk, G. N. Gol’tsman & A. A. Verevkin

  2. Rutgers University, NJ, 08854, Piscataway, USA

    A. A. Verevkin

  3. Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    A. I. Toropov

Authors
  1. E. L. Shangina
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  2. K. V. Smirnov
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  3. D. V. Morozov
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  4. V. V. Kovalyuk
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  5. G. N. Gol’tsman
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  6. A. A. Verevkin
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  7. A. I. Toropov
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Corresponding author

Correspondence to E. L. Shangina.

Additional information

Original Russian Text © E.L. Shangina, K.V. Smirnov, D.V. Morozov, V.V. Kovalyuk, G.N. Gol’tsman, A.A. Verevkin, A.I. Toropov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 11, pp. 1475–1477.

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Shangina, E.L., Smirnov, K.V., Morozov, D.V. et al. Frequency bandwidth and conversion loss of a semiconductor heterodyne receiver with phonon cooling of two-dimensional electrons. Semiconductors 44, 1427–1429 (2010). https://doi.org/10.1134/S1063782610110096

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  • DOI: https://doi.org/10.1134/S1063782610110096

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