Polaron effect on <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mrow><msup><mrow><mi>D</mi></mrow><mrow><mi>−</mi></mrow></msup></mrow></math></span> centers in weakly polar semiconductors

J. M. Shi; F. M. Peeters; G. A. Farias; J. A. K. Freire; G. Q. Hai; J. T. Devreese; S. Bednarek; J. Adamowski

doi:10.1103/PhysRevB.57.3900

Polaron effect on $D^{-}$ centers in weakly polar semiconductors

J. M. Shi, F. M. Peeters, G. A. Farias, J. A. K. Freire, G. Q. Hai, J. T. Devreese, S. Bednarek, and J. Adamowski

Phys. Rev. B 57, 3900 – Published 15 February 1998

Abstract

The polaron correction to the energy of the two-electron bound ${(D}^{-})$ states of a shallow donor in weakly polar semiconductors is calculated. Both upper and lower bounds to the energy shift of the ground state and also to the $D^{-}$ transition energy are derived within second-order perturbation theory. The results show a stronger polaron effect in these systems than for two independent single-electron systems. The polaron correction to the $D^{-}$ level depends strongly on the properties of the electron-phonon interaction and/or the relative position of the two electrons.

Received 19 June 1997

DOI:https://doi.org/10.1103/PhysRevB.57.3900

Authors & Affiliations

J. M. Shi

Departamento de Física, Universidade Federal do Ceará, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceará, Brazil
Departement Natuurkunde, Universitaire Instelling Antwerpen, Universiteitsplein 1, B-2610 Antwerpen, Belgium

F. M. Peeters