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Electronic properties of 2H-stacking bilayer MoS2 measured by terahertz time-domain spectroscopy

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Abstract

Bilayer (BL) molybdenum disulfide (MoS2) is one of the most important electronic structures not only in valleytronics but also in realizing twistronic systems on the basis of the topological mosaics in moiré superlattices. In this work, BL MoS2 on sapphire substrate with 2H-stacking structure is fabricated. We apply the terahertz (THz) time-domain spectroscopy (TDS) for examining the basic optoelectronic properties of this kind of BL MoS2. The optical conductivity of BL MoS2 is obtained in temperature regime from 80 K to 280 K. Through fitting the experimental data with the theoretical formula, the key sample parameters of BL MoS2 can be determined, such as the electron density, the electronic relaxation time and the electronic localization factor. The temperature dependence of these parameters is examined and analyzed. We find that, similar to monolayer (ML) MoS2, BL MoS2 with 2H-stacking can respond strongly to THz radiation field and show semiconductor-like optoelectronic features. The theoretical calculations using density functional theory (DFT) can help us to further understand why the THz optoelectronic properties of BL MoS2 differ from those observed for ML MoS2. The results obtained from this study indicate that the THz TDS can be applied suitably to study the optoelectronic properties of BL MoS2 based twistronic systems for novel applications as optical and optoelectronic materials and devices.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (NSFC) (Grant Nos. U2230122 and U2067207) and Shenzhen Science and Technology Program (No. KQTD20190929173954826). The numerical calculations in this work were conducted at Hefei advanced computing center.

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Authors and Affiliations

  1. Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China

    Xingjia Cheng, Wen Xu, Hua Wen, Jing Zhang, Heng Zhang & Qingqing Chen

  2. University of Science and Technology of China, Hefei, 230026, China

    Xingjia Cheng, Hua Wen, Jing Zhang, Heng Zhang & Qingqing Chen

  3. Micro Optical Instruments Inc., Shenzhen, 518118, China

    Wen Xu, Haowen Li & Francois M. Peeters

  4. School of Physics and Astronomy and Yunnan Key Laboratory of Quantum Information of Yunnan Province, Yunnan University, Kunming, 650091, China

    Wen Xu

  5. Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020, Antwerpen, Belgium

    Francois M. Peeters

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  1. Xingjia Cheng
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  2. Wen Xu
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  3. Hua Wen
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Correspondence to Wen Xu.

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Cheng, X., Xu, W., Wen, H. et al. Electronic properties of 2H-stacking bilayer MoS2 measured by terahertz time-domain spectroscopy. Front. Phys. 18, 53303 (2023). https://doi.org/10.1007/s11467-023-1295-1

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