Hierarchical hexagonal boron nitride nanowall–diamond nanorod heterostructures with enhanced optoelectronic performance

Kamatchi Jothiramalingam Sankaran; Duc Quang Hoang; Svetlana Korneychuk; Srinivasu Kunuku; Joseph Palathinkal Thomas; Paulius Pobedinskas; Sien Drijkoningen; Marlies K. Van Bael; Jan D'Haen; Johan Verbeeck; Keh-Chyang Leou; Kam Tong Leung; I.-Nan Lin; Ken Haenen

doi:10.1039/C6RA19596B

Hierarchical hexagonal boron nitride nanowall–diamond nanorod heterostructures with enhanced optoelectronic performance†

Kamatchi Jothiramalingam Sankaran,*^ab Duc Quang Hoang,^ab Svetlana Korneychuk,^c Srinivasu Kunuku,^d Joseph Palathinkal Thomas,^e Paulius Pobedinskas,^ab Sien Drijkoningen,^ab Marlies K. Van Bael,^ab Jan D'Haen,^ab Johan Verbeeck,^c Keh-Chyang Leou,^d Kam Tong Leung,^e I.-Nan Lin^f and Ken Haenen*^ab

Author affiliations

* Corresponding authors

^a Institute for Materials Research (IMO), Hasselt University, 3590 Diepenbeek, Belgium

^b IMOMEC, IMEC vzw, 3590 Diepenbeek, Belgium
E-mail: sankaran.kamatchi@uhasselt.be, ken.haenen@uhasselt.be

^c Electron Microscopy for Materials Science (EMAT), University of Antwerp, 2020 Antwerp, Belgium

^d Department of Engineering and System Science, National Tsing Hua University, 30013 Hsinchu, Taiwan

^e WATLab and Department of Chemistry, University of Waterloo, Waterloo, N2L3G1 Ontario, Canada

^f Department of Physics, Tamkang University, 251 Tamsui, Taiwan

Abstract

A superior field electron emission (FEE) source made from a hierarchical heterostructure, where two-dimensional hexagonal boron nitride (hBN) nanowalls were coated on one-dimensional diamond nanorods (DNRs), is fabricated using a simple and scalable method. FEE characteristics of hBN-DNR display a low turn-on field of 6.0 V μm⁻¹, a high field enhancement factor of 5870 and a high life-time stability of 435 min. Such an enhancement in the FEE properties of hBN-DNR derives from the distinctive material combination, i.e., high aspect ratio of the heterostructure, good electron transport from the DNR to the hBN nanowalls and efficient field emission of electrons from the hBN nanowalls. The prospective application of these heterostructures is further evidenced by enhanced microplasma devices using hBN-DNR as a cathode, in which the threshold voltage was lowered to 350 V, affirming the role of hBN-DNR in the improvement of electron emission.

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Hierarchical hexagonal boron nitride nanowall–diamond nanorod heterostructures with enhanced optoelectronic performance†

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