Electronic states in a graphene flake strained by a Gaussian bump

D. Moldovan, M. Ramezani Masir, and F. M. Peeters
Phys. Rev. B 88, 035446 – Published 30 July 2013

Abstract

The effect of strain in graphene is usually modeled by a pseudomagnetic vector potential which is, however, derived in the limit of small strain. In realistic cases deviations are expected in view of graphene's very high strain tolerance, which can be up to 25%. Here we investigate the pseudomagnetic field generated by a Gaussian bump and we show that it exhibits significant differences with numerical tight-binding results. Furthermore, we calculate the electronic states in the strained region for a hexagon shaped flake with armchair edges. We find that the sixfold symmetry of the wave functions inside the Gaussian bump is directly related to the different effects of strain along the fundamental directions of graphene: zigzag and armchair. Low energy electrons are strongly confined in the armchair directions and are localized on the carbon atoms of a single sublattice.

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  • Received 29 March 2013

DOI:https://doi.org/10.1103/PhysRevB.88.035446

©2013 American Physical Society

Authors & Affiliations

D. Moldovan*, M. Ramezani Masir, and F. M. Peeters

  • Departement Fysica, Universiteit Antwerpen Groenenborgerlaan 171, B-2020 Antwerpen, Belgium

  • *dean.moldovan@uantwerpen.be
  • mrmphys@gmail.com
  • francois.peeters@uantwerpen.be

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Issue

Vol. 88, Iss. 3 — 15 July 2013

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