Abstract
Quantum spin Hall (QSH) insulators with a large topologically nontrivial bulk gap are crucial for future applications of the QSH effect. Among these, group III–V monolayers and their halides, which have a chair structure (regular hexagonal framework), have been widely studied. Using first-principles calculations, we formulate a new structure model for the functionalized group III–V monolayers, which consist of rectangular GaBi-X2 (X = I, Br, Cl) monolayers with a distorted hexagonal framework (DHF). These structures have a far lower energy than the GaBi-X2 monolayers with a chair structure. Remarkably, the DHF GaBi-X2 monolayers are all QSH insulators, which exhibit sizeable nontrivial bandgaps ranging from 0.17 to 0.39 eV. The bandgaps can be widely tuned by applying different spin-orbit coupling strengths, resulting in a distorted Dirac cone.
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Acknowledgements
This work was supported by the Fonds Wetenschappelijk Onderzoek (FWO-Vl). The computational resources and services used in this work were provided by the VSC (Flemish Supercomputer Center), funded by the Research Foundation-Flanders (FWO) and the Flemish Government–department EWI.
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Gallium bismuth halide GaBi-X2 (X = I, Br, Cl) monolayers with distorted hexagonal framework: Novel room-temperature quantum spin Hall insulators
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Li, L., Leenaerts, O., Kong, X. et al. Gallium bismuth halide GaBi-X2 (X = I, Br, Cl) monolayers with distorted hexagonal framework: Novel room-temperature quantum spin Hall insulators. Nano Res. 10, 2168–2180 (2017). https://doi.org/10.1007/s12274-017-1464-z
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DOI: https://doi.org/10.1007/s12274-017-1464-z