Interplay of morphology, composition, and optical properties of InP-based quantum dots emitting at the 1.55μm telecom wavelength

C. Carmesin, M. Schowalter, M. Lorke, D. Mourad, T. Grieb, K. Müller-Caspary, M. Yacob, J. P. Reithmaier, M. Benyoucef, A. Rosenauer, and F. Jahnke
Phys. Rev. B 96, 235309 – Published 26 December 2017
PDFHTMLExport Citation
Abstract
Authors
Article Text
  • INTRODUCTION
  • EXPERIMENTAL RESULTS
  • THEORETICAL ANALYSIS
  • CONCLUSION
  • ACKNOWLEDGMENTS
    • Supplemental Material
    References

    Abstract

    Results for the development and detailed analysis of self-organized InAs/InAlGaAs/InP quantum dots suitable for single-photon emission at the 1.55μm telecom wavelength are reported. The structural and compositional properties of the system are obtained from high-resolution scanning transmission electron microscopy of individual quantum dots. The system is composed of almost pure InAs quantum dots embedded in quaternary InAlGaAs barrier material, which is lattice matched to the InP substrate. When using the measured results for a representative quantum-dot geometry as well as experimentally reconstructed alloy concentrations, a combination of strain-field and electronic-state calculations is able to reproduce the quantum-dot emission wavelength in agreement with the experimentally determined photoluminescence spectrum. The inhomogeneous broadening of the latter can be related to calculated variations of the emission wavelength for the experimentally deduced In-concentration fluctuations and size variations.

    • Figure
    • Figure
    • Figure
    • Figure
    • Figure
    • Figure
    • Received 18 August 2017
    • Revised 30 November 2017

    DOI:https://doi.org/10.1103/PhysRevB.96.235309

    ©2017 American Physical Society

    Physics Subject Headings (PhySH)

    1. Research Areas
    Band gapElectronic structureGrowthSemiconductorsStructural properties
    1. Physical Systems
    Quantum dots
    1. Techniques
    Molecular beam epitaxyPhotoluminescenceTight-binding modelTransmission electron microscopy
    Condensed Matter, Materials & Applied Physics

    Authors & Affiliations

    C. Carmesin1,*, M. Schowalter2, M. Lorke1, D. Mourad1,3, T. Grieb2, K. Müller-Caspary4, M. Yacob5, J. P. Reithmaier5, M. Benyoucef5, A. Rosenauer2,6, and F. Jahnke1,6

    • 1Institute for Theoretical Physics, University of Bremen, 28359 Bremen, Germany
    • 2Institute of Solid State Physics, University of Bremen, 28359 Bremen, Germany
    • 3Bremen Center for Computational Materials Science, University of Bremen, 28359 Bremen, Germany
    • 4EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
    • 5Institute of Nanostructure Technologies and Analytics (INA), CINSaT, University of Kassel, 34132 Kassel, Germany
    • 6MAPEX Center for Materials and Processes, University of Bremen, 28359 Bremen, Germany

    • *ccarmesin@itp.uni-bremen.de

    Article Text (Subscription Required)

    Click to Expand

    Supplemental Material (Subscription Required)

    Click to Expand

    References (Subscription Required)

    Click to Expand
    Issue

    Vol. 96, Iss. 23 — 15 December 2017

    Reuse & Permissions
    Access Options
    Author publication services for translation and copyediting assistance advertisement

    Authorization Required

    Log In
    Other Options
    ×

    Download & Share

    PDFExportReuse & PermissionsCiting Articles (14)
    ×

    Images

    ×

    Sign up to receive regular email alerts from Physical Review B

    Log In

    Cancel
    ×

    Search

    Article Lookup

    Paste a citation or DOI
    Enter a citation
    ×