Mg(OH)2WS2 van der Waals heterobilayer: Electric field tunable band-gap crossover

M. Yagmurcukardes, E. Torun, R. T. Senger, F. M. Peeters, and H. Sahin
Phys. Rev. B 94, 195403 – Published 3 November 2016

Abstract

Magnesium hydroxide [Mg(OH)2] has a layered brucitelike structure in its bulk form and was recently isolated as a new member of two-dimensional monolayer materials. We investigated the electronic and optical properties of monolayer crystals of Mg(OH)2 and WS2 and their possible heterobilayer structure by means of first-principles calculations. It was found that both monolayers of Mg(OH)2 and WS2 are direct-gap semiconductors and these two monolayers form a typical van der Waals heterostructure with a weak interlayer interaction and a type-II band alignment with a staggered gap that spatially separates electrons and holes. We also showed that an out-of-plane electric field induces a transition from a staggered to a straddling-type heterojunction. Moreover, by solving the Bethe-Salpeter equation on top of single-shot G0W0 calculations, we show that the low-energy spectrum of the heterobilayer is dominated by the intralyer excitons of the WS2 monolayer. Because of the staggered interfacial gap and the field-tunable energy-band structure, the Mg(OH)2WS2 heterobilayer can become an important candidate for various optoelectronic device applications in nanoscale.

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  • Received 10 March 2016
  • Revised 12 May 2016

DOI:https://doi.org/10.1103/PhysRevB.94.195403

©2016 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. Yagmurcukardes1,*, E. Torun2, R. T. Senger1, F. M. Peeters2, and H. Sahin2,3,†

  • 1Department of Physics, Izmir Institute of Technology, 35430 Izmir, Turkey
  • 2Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
  • 3Department of Photonics, Izmir Institute of Technology, 35430 Izmir, Turkey

  • *mehmetyagmurcukardes@iyte.edu.tr
  • hasansahin@iyte.edu.tr

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Issue

Vol. 94, Iss. 19 — 15 November 2016

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