Terahertz optical Hall effect in monolayer MoS2 in the presence of proximity-induced interactions

X. N. Zhao, W. Xu, Y. M. Xiao, J. Liu, B. Van Duppen, and F. M. Peeters
Phys. Rev. B 101, 245412 – Published 8 June 2020

Abstract

The effect of proximity-induced interactions such as Rashba spin-orbit coupling (SOC) and exchange interaction on the electronic and optical properties of n-type monolayer (ML) MoS2 is investigated. We predict and demonstrate that the Rashba SOC can induce an in-plane spin splitting with terahertz (THz) energy, while the exchange interaction lifts the energy degeneracy in different valleys. Thus, spin polarization can be achieved in an n-type ML MoS2 and valley Hall or optical Hall effect can be observed using linearly polarized THz radiation. In such a case, the transverse optical conductivity σxy(ω) results from spin-flip transition within spin-split conduction bands and from the fact that contributions from electrons with different spin orientations in different valleys can no longer be canceled out. Interestingly, we find that for fixed effective Zeeman field (or exchange interaction) the lowest spin-split conduction band in ML MoS2 can be tuned from one in the K valley to another one in the K valley by varying the Rashba parameter λR. Therefore, by changing λR we can turn the sign of the spin polarization and Imσxy(ω) from positive to negative. Moreover, we find that the dominant contribution of the selection rules to σxx(ω) is from electrons in the K valley and to σxy(ω) is from electrons in the K valley. These important and interesting theoretical findings can be helpful to experimental observation of the optical Hall effect in valleytronic systems using linearly polarized THz radiation fields.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
5 More
  • Received 25 March 2020
  • Revised 17 May 2020
  • Accepted 19 May 2020

DOI:https://doi.org/10.1103/PhysRevB.101.245412

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

X. N. Zhao1,2, W. Xu1,3,*, Y. M. Xiao3, J. Liu3, B. Van Duppen4, and F. M. Peeters3,4

  • 1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
  • 2Chinese University of Science and Technology, Hefei 230026, China
  • 3School of Physics and Astronomy and Yunnan Key Laboratory for Quantum Information, Yunnan University, Kunming 650091, China
  • 4Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium

  • *wenxu_issp@aliyun.com

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 101, Iss. 24 — 15 June 2020

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×