Tight-binding model investigation of the biaxial strain induced topological phase transition in GeCH3

Mohsen Rezaei, Esmaeil Taghizadeh Sisakht, Farhad Fazileh, Zahra Aslani, and F. M. Peeters
Phys. Rev. B 96, 085441 – Published 29 August 2017

Abstract

We propose a tight-binding (TB) model, that includes spin-orbit coupling (SOC), to describe the electronic properties of methyl-substituted germanane (GeCH3). This model gives an electronic spectrum in agreement with first principle results close to the Fermi level. Using the Z2 formalism, we show that a topological phase transition from a normal insulator (NI) to a quantum spin Hall (QSH) phase occurs at 11.6% biaxial tensile strain. The sensitivity of the electronic properties of this system on strain, in particular its transition to the topological insulating phase, makes it very attractive for applications in strain sensors and other microelectronic applications.

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  • Received 5 June 2017

DOI:https://doi.org/10.1103/PhysRevB.96.085441

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Mohsen Rezaei1, Esmaeil Taghizadeh Sisakht1,2, Farhad Fazileh1,*, Zahra Aslani1, and F. M. Peeters2

  • 1Department of Physics, Isfahan University of Technology, Isfahan 84156-83111, Iran
  • 2Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium

  • *fazileh@cc.iut.ac.ir

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Vol. 96, Iss. 8 — 15 August 2017

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