Valley-Dependent Brewster Angles and Goos-Hänchen Effect in Strained Graphene

Zhenhua Wu, F. Zhai, F. M. Peeters, H. Q. Xu, and Kai Chang
Phys. Rev. Lett. 106, 176802 – Published 29 April 2011

Abstract

We demonstrate theoretically how local strains in graphene can be tailored to generate a valley-polarized current. By suitable engineering of local strain profiles, we find that electrons in opposite valleys (K or K) show different Brewster-like angles and Goos-Hänchen shifts, exhibiting a close analogy with light propagating behavior. In a strain-induced waveguide, electrons in K and K valleys have different group velocities, which can be used to construct a valley filter in graphene without the need for any external fields.

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  • Received 7 October 2010

DOI:https://doi.org/10.1103/PhysRevLett.106.176802

© 2011 American Physical Society

Authors & Affiliations

Zhenhua Wu1, F. Zhai2, F. M. Peeters3, H. Q. Xu4, and Kai Chang1,5,*

  • 1SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083, Beijing, China
  • 2Department of Physics, Zhejiang Normal University, Jinhua 321004, China
  • 3Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
  • 4Division of Solid State Physics, Lund University, Box 118, S-22100 Lund, Sweden
  • 5Beijing Computational Science Research Center, Beijing 100089, China

  • *kchang@semi.ac.cn

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Vol. 106, Iss. 17 — 29 April 2011

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