Abstract
We present the thermoelectric power \(S(T)\) of the Ce(Pd\(_{1-x}\)Cu\(_x\))\(_2\)Si\(_2\) alloy for temperatures \(1.5\,\mathrm{K}<T<300\,\)K. We observe three characteristic features across the \(0<x<1\) substitution range: two positive maxima and a negative minimum, that are typical for Ce compounds that display, or lie close to, magnetism. Our analysis of the data shows that the high-\(T\) maximum is related to the Kondo effect on excited crystal-field levels, but that the low-\(T\) one cannot be simply associated with the Kondo scale, \(T_\mathrm{K}\). We speculate that disorder induced by alloying can be at the origin of this discrepancy and can also be responsible for the low \(S(T)\) measured at low temperatures in the \(0.2<x<0.8\) concentration range. We have extended electrical resistivity measurements on Ce(PdCu)Si\(_2\) (\(x=0.5\)) down to \(T\sim 40\) mK in applied fields as high as \(16\) T.
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Notes
Dilution refrigerator MCK50-400 from Leiden Cryogenics B.V., inside a \(18\,\)Tesla superconducting magnet from Oxford Instruments.
The \(\rho (T)\) data for this La-alloy can be roughly described, in \(\upmu \Omega \,\)cm, by \(\rho (T)=126.2+3.4(T/60)^{2.4}\) below \(60\,\)K and \(\rho (T)=121.5+0.132 T\) above.
Notice that \(\rho _{m}=\rho -\rho _\mathrm{ref}\) still has a very large contribution at low \(T\) of the order of \(350\,\upmu \Omega \,\)cm. An overestimation of \(\rho _{m}\), due e.g., microcracks in the sample, would lead to underestimate \(S_\mathrm{m}\).
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Acknowledgments
We are grateful to C. Geibel for providing the samples, to L. Tosi for his assistance in the low-\(T\) \(\rho (T)\) measurements and to J.G. Sereni for fruitful discussions. Work financially supported by PIP 112-2009-0100448 (CONICET) and PICT Bicentenario 2010-1060 (ANPCyT). S.E. holds a PhD scholarship from CONICET, while P.P. is a member of CONICET.
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Encina, S., Pedrazzini, P. Low Temperature Thermoelectric Power of Ce(Pd\(_{1-x}\)Cu\(_x\))\(_2\)Si\(_2\) . J Low Temp Phys 179, 21–27 (2015). https://doi.org/10.1007/s10909-014-1262-x
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DOI: https://doi.org/10.1007/s10909-014-1262-x