Abstract:
We present electrical resistivity and specific heat measurements of alloys on the Rh rich side of the phase diagram of the Ce(Rh1-xPdx)2Si2 system. We compare these results with those obtained at intermediate and low Rh concentrations. The analysis of the concentration and temperature dependence of the entropy and of the scaling behaviour of C el ( T ) and ρ( T ) clearly confirm a separation of the magnetic phase diagram into two regions: the region x ≤0.3, showing a concentration independent characteristic temperature for the 4 f-electrons with T 0 ≈ 45 K, while for x > 0.3, T0 decreases to T 0 ( x = 1) ≈ 15 K. At low Pd-content, TN decreases very rapidly from T N = 36 K in pure CeRh2Si2 to T N = 18 K at x = 0.1. With higher Pd concentration TN stabilizes at T N ≈ 15 K whereas the magnitude of the anomalies in C el ( T ) and in the susceptibility around TN are further reduced and disappear at x ≈ 0.3. This differs from the behavior found on the Pd-rich side, where TN decreases continuously to zero with increasing Rh content. The pronounced differences observed between both phase boundaries and the drastic effect of doping on the Rh rich side suggest an itinerant character in CeRh2 Si2, in contrast with the localized character of CePd2Si2. Further evidence for the itinerant character of CeRh2Si2 is given by the ρ( T ) dependence observed for x ≤0.3, which scales with ρ( T ) of the prototype itinerant compound YCo2.
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Received 31 December 2001 / Received in final form 6 July 2002 Published online 19 December 2002
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Gómez Berisso, M., Pedrazzini, P., Sereni, J. et al. Study of : pronounced differences between the and ground states. Eur. Phys. J. B 30, 343–349 (2002). https://doi.org/10.1140/epjb/e2002-00388-1
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DOI: https://doi.org/10.1140/epjb/e2002-00388-1