Influence of ion implantation on the magnetic and transport properties of manganite films

M. Sirena, A. Zimmers, N. Haberkorn, E. E. Kaul, L. B. Steren, J. Lesueur, T. Wolf, Y. Le Gall, J.-J. Grob, and G. Faini
Phys. Rev. B 81, 134439 – Published 30 April 2010

Abstract

We have used oxygen ions irradiation to generate controlled structural disorder in thin manganite films. Conductive atomic force microscopy (CAFM) and transport and magnetic measurements were performed to analyze the influence of the implantation process in the physical properties of the films. CAFM images show regions with different conductivity values, probably due to the random distribution of point defect. The transport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition can be described in the frame of a percolative model. Disorder increases the distance between conducting regions, lowering the observed TMI. Point-defect disorder increases localization of the carriers due to increased disorder and locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign of low-field magnetoresistance was found. Point-defect disorder decreases the system magnetization but does not seem to change the magnetic transition temperature. The coercive field of the samples increases linearly with increasing disorder but decreases when disorder is higher than a critical value.

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  • Received 7 December 2009

DOI:https://doi.org/10.1103/PhysRevB.81.134439

©2010 American Physical Society

Authors & Affiliations

M. Sirena1, A. Zimmers2, N. Haberkorn1, E. E. Kaul1, L. B. Steren1,*, J. Lesueur2, T. Wolf2, Y. Le Gall3, J.-J. Grob3, and G. Faini4

  • 1Instituto Balseiro, Univ. Nac. de Cuyo and CNEA, Av. Bustillo 9500, 8400 Bariloche, Rio Negro, Argentina
  • 2UPR5-LPEM-CNRS, Physique Quantique, ESPCI, 10 rue Vauquelin, 75231 Paris, France
  • 3Institut d'Électronique du Solide et des Systèmes, UMR 7163, 23 rue du Loess, BP 20, F-67037 Strasbourg Cedex 02, France
  • 4LPN-CNRS, Route de Nozay, 91460 Marcoussis, France

  • *Permanent address: Centro Atómico Constituyentes, Av. Gral. Paz 1499, San Martín 1650, Buenos Aires, Argentina.

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Vol. 81, Iss. 13 — 1 April 2010

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