Electron energy relaxation in disordered superconducting NbN films

Mariia Sidorova, Alexej Semenov, Heinz-Wilhelm Hübers, Konstantin Ilin, Michael Siegel, Ilya Charaev, Maria Moshkova, Natalia Kaurova, Gregory N. Goltsman, Xiaofu Zhang, and Andreas Schilling
Phys. Rev. B 102, 054501 – Published 3 August 2020

Abstract

We report on the inelastic-scattering rate of electrons on phonons and relaxation of electron energy studied by means of magnetoconductance, and photoresponse, respectively, in a series of strongly disordered superconducting NbN films. The studied films with thicknesses in the range from 3 to 33 nm are characterized by different Ioffe-Regel parameters but an almost constant product qTl (qT is the wave vector of thermal phonons and l is the elastic mean free path of electrons). In the temperature range 14–30 K, the electron-phonon scattering rates obey temperature dependencies close to the power law 1/τephTn with the exponents n3.23.8. We found that in this temperature range τeph and n of studied films vary weakly with the thickness and square resistance. At 10 K electron-phonon scattering times are in the range 11.9–17.5 ps. The data extracted from magnetoconductance measurements were used to describe the experimental photoresponse with the two-temperature model. For thick films, the photoresponse is reasonably well described without fitting parameters, however, for thinner films, the fit requires a smaller heat capacity of phonons. We attribute this finding to the reduced density of phonon states in thin films at low temperatures. We also show that the estimated Debye temperature in the studied NbN films is noticeably smaller than in bulk material.

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  • Received 28 June 2019
  • Revised 2 July 2020
  • Accepted 7 July 2020

DOI:https://doi.org/10.1103/PhysRevB.102.054501

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Mariia Sidorova1, Alexej Semenov1, Heinz-Wilhelm Hübers1,2, Konstantin Ilin3, Michael Siegel3, Ilya Charaev4, Maria Moshkova5,6, Natalia Kaurova6, Gregory N. Goltsman6,5, Xiaofu Zhang7, and Andreas Schilling7

  • 1Institute of Optical Sensor Systems, German Aerospace Center (DLR), Rutherfordstrasse 2, 12489 Berlin, Germany
  • 2Department of Physics, Faculty of Mathematics and Natural Sciences, Humboldt University Berlin, Unter den Linden 6, 10099 Berlin, Germany
  • 3Institut für Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut für Technologie (KIT), Hertzstrasse 16, 76187 Karlsruhe, Germany
  • 4Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 5HSE Tikhonov Moscow Institute of Electronics and Mathematics, National Research University Higher School of Economics, Tallinskaya Ulitsa34, 123458, Moscow, Russia
  • 6Department of Physics, Moscow Pedagogical State University, 29 Malaya Pirogovskaya Street, Moscow 119435, Russia
  • 7Physics Institute, University of Zürich, Winterthurerstrasse 190, 8057 Zürich, Switzerland

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Issue

Vol. 102, Iss. 5 — 1 August 2020

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