Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films

K. S. Il’in, N. G. Ptitsina, A. V. Sergeev, G. N. Gol’tsman, E. M. Gershenzon, B. S. Karasik, E. V. Pechen, and S. I. Krasnosvobodtsev
Phys. Rev. B 57, 15623 – Published 15 June 1998
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Abstract

A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=213nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence Tn, with the exponent n=2.53. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data.

  • Received 24 October 1997

DOI:https://doi.org/10.1103/PhysRevB.57.15623

©1998 American Physical Society

Authors & Affiliations

K. S. Il’in, N. G. Ptitsina, A. V. Sergeev, G. N. Gol’tsman, and E. M. Gershenzon

  • Moscow State Pedagogical University, Moscow 119435, Russia

B. S. Karasik

  • Jet Propulsion Laboratory, California Institute of Technology, Pasadena, California 91109-8099

E. V. Pechen and S. I. Krasnosvobodtsev

  • Lebedev Institute of Physics, Moscow 117924, Russia

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Vol. 57, Iss. 24 — 15 June 1998

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