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Low-noise wide-band hot-electron bolometer mixer based on an NbN film

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Radiophysics and Quantum Electronics Aims and scope

We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.

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Authors and Affiliations

  1. Moscow State Pedagogical University, Moscow, Russia

    S. A. Ryabchun, I. V. Tretyakov, I. V. Pentin, N. S. Kaurova, V. A. Seleznev, B. M. Voronov, M. I. Finkel, S. N. Maslennikov & G. N. Gol’tsman

  2. Astrospace Center of the P.N. Lebedev Physical Institute of the Russian Academy of Sciences, Moscow, Russia

    M. I. Finkel & G. N. Gol’tsman

Authors
  1. S. A. Ryabchun
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  2. I. V. Tretyakov
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  3. I. V. Pentin
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  4. N. S. Kaurova
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  5. V. A. Seleznev
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  6. B. M. Voronov
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  7. M. I. Finkel
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  8. S. N. Maslennikov
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  9. G. N. Gol’tsman
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Corresponding author

Correspondence to G. N. Gol’tsman.

Additional information

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 52, No. 8, pp. 641–648, August 2009.

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Ryabchun, S.A., Tretyakov, I.V., Pentin, I.V. et al. Low-noise wide-band hot-electron bolometer mixer based on an NbN film. Radiophys Quantum El 52, 576–582 (2009). https://doi.org/10.1007/s11141-010-9162-7

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  • DOI: https://doi.org/10.1007/s11141-010-9162-7

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