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Developing of NbN films for superconducting microstrip single-photon detector

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, , Citation N. N. Manova et al 2020 J. Phys.: Conf. Ser. 1695 012116 DOI 10.1088/1742-6596/1695/1/012116

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1 Institute of Physics, Technology, and Information Systems, Moscow State Pedagogical University, Moscow 119991, Russia

2 National Research University Higher School of Economics, Moscow 101000, Russia

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1742-6596/1695/1/012116

Abstract

We optimized NbN films on a Si substrate with a buffer SiO2 layer to produce superconducting microstrip single-photon detectors with saturated dependence of quantum efficiency (QE) versus normalized bias current. We varied thickness of films and observed the maximum QE saturation for device based on the thinner film with the lowest ratio RS300/RS20.

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10.1088/1742-6596/1695/1/012116