Abstract
The temperature dependence of the resistivity of thin Nb, Al, Be films has been studied over a wide temperature range 4-300 K. We have found that the temperature-dependent correction to the residual resistivity is well described by the sum of the Bloch-Grüneisen term and the term originating from the interference between electron-phonon and electron-impurity scattering. Study of the transport interference phenomena allows to determine electron-phonon coupling in disordered metals. The interference term is proportional to T2 and also to the residual resistivity and dominates over the Bloch-Grüneisen term at low temperatures (T<40 K).
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Chulcova, G.M., Ptitsina, N.G., Gershenzon, E.M. et al. Effect of the interference between electron-phonon and electron-impurity (boundary) scattering on resistivity Nb, Al, Be films. Czech J Phys 46 (Suppl 5), 2489–2490 (1996). https://doi.org/10.1007/BF02570231
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DOI: https://doi.org/10.1007/BF02570231