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Graphene-layer and graphene-nanoribbon FETs as THz detectors

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, , Citation Y E Matyushkin et al 2018 J. Phys.: Conf. Ser. 1124 051054 DOI 10.1088/1742-6596/1124/5/051054

1742-6596/1124/5/051054

Abstract

We report on detection of sub-THz radiation (129-430 GHz) using graphene based asymmetric field-effect transistor (FET) structures with different channel geometry: monolayer graphene, graphene nanoribbons. In all devices types we observed the similar trends of response on sub-THz radiation. The response fell with increasing frequency at room temperature, but increased with increasing frequency at 77 K. Our calculations show that the change in the trend of the frequency dependence at 77 K is associated with the appearance of plasma waves in the graphene channel. Unusual properties of p-n junctions in graphene are highlighted using devices of special geometry.

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10.1088/1742-6596/1124/5/051054