Membrane-based HEB mixer for THz applications

Jean Baubert; Morvan Salez; Yan Delorme; Patrick Pons; Gregory Goltsman; Harald Merkel; Benoit Leconte

doi:10.1117/12.499158

24 April 2003 Membrane-based HEB mixer for THz applications

Jean Baubert, Morvan Salez, Yan Delorme, Patrick Pons, Gregory Goltsman, Harald Merkel, Benoit Leconte

Proceedings Volume 5116, Smart Sensors, Actuators, and MEMS; (2003) https://doi.org/10.1117/12.499158
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain

Abstract

We report in this paper a new concept for 2.7 THz superconducting Niobium nitride (NbN) Hot-Electron Bolometer mixer (HEB). The membrane process was developped for space telecommnunication applications a few years ago and the HEB mixer concept is now considered as the best choice for low-noise submillimeter-wave frequency heterodyne receivers. The idea is then to join these two technologies. The novel fabrication scheme is to fabricate a NbN HEB mixer on a 1 μm thick stress-less Si₃N₄/SiO₂ membrane. This seems to present numerous improvements concerning : use at higher RF frequencies, power coupling efficiency, HEB mixer sensitivity, noise temperature, and space applications. This work is to be continued within the framework of an ESA TRP project, a 2.7 THz heterodyne camera with numerous applications including a SOFIA airborne receiver. This paper presents the whole fabrication process, the validation tests and preliminary results. Membrane-based HEB mixer theory is currently being investigated and further tests such as heterodyne and Fourier transform spectrometry measurement are planed shortly.

Citation Download Citation

Jean Baubert, Morvan Salez, Yan Delorme, Patrick Pons, Gregory Goltsman, Harald Merkel, and Benoit Leconte "Membrane-based HEB mixer for THz applications", Proc. SPIE 5116, Smart Sensors, Actuators, and MEMS, (24 April 2003); https://doi.org/10.1117/12.499158

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