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Topology and electron scattering properties of the electronic interfaces in epitaxial graphene probed by resonant tunneling spectroscopy

H. Yang, G. Baffou, A. J. Mayne, G. Comtet, G. Dujardin, and Y. Kuk
Phys. Rev. B 78, 041408(R) – Published 28 July 2008

Abstract

ZV scanning tunneling spectroscopy is used to probe the topology and electron scattering properties of the electronic interfaces of monolayer and bilayer graphenes, expitaxially grown on SiC(0001). The dZ/dV spectra validate existing calculations of the interface topology and provide evidence for new electron scattering properties due to changes in the electronic character of the bonding. Two sharp boundaries are observed: between the vacuum and the graphene π state lying above the graphene atom plane and a subsurface barrier between the carbon-rich layer and the bulk SiC.

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  • Received 16 June 2008

DOI:https://doi.org/10.1103/PhysRevB.78.041408

©2008 American Physical Society

Authors & Affiliations

H. Yang1,2, G. Baffou1, A. J. Mayne1, G. Comtet1, G. Dujardin1, and Y. Kuk2

  • 1Laboratoire de Photophysique Moléculaire, CNRS, Université Paris Sud, Bâtiment 210, 91405 Orsay, France
  • 2Department of Physics and Astronomy, Seoul National University, 151-747 Seoul, Republic of Korea

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Issue

Vol. 78, Iss. 4 — 15 July 2008

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