Atomic-scale control of hydrogen bonding on a bare Si(100)-2×1 surface

Hatem Labidi, Lev Kantorovich, and Damien Riedel
Phys. Rev. B 86, 165441 – Published 25 October 2012
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Abstract

The control of the dissociative adsorption of individual hydrogen molecules is performed on the silicon surface at the atomic scale. It is achieved using the tip of a low-temperature (9 K) scanning tunneling microscope (STM) exposed to 106 torr of H2 and by probing the bare Si(100)-2 × 1 surface at a positive bias. This effect is very localized and is induced by the tunnel electrons. The statistical study of this process reveals an activation energy threshold matching the creation of H2 at the surface of the STM tip. Our results are supported by ab inito density functional calculations of a hydrogenated silicon dimer.

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  • Received 7 May 2012

DOI:https://doi.org/10.1103/PhysRevB.86.165441

©2012 American Physical Society

Authors & Affiliations

Hatem Labidi1, Lev Kantorovich2, and Damien Riedel1,*

  • 1Institut des Sciences Moléculaires d’Orsay, UMR8214, Université Paris Sud, Orsay Cedex 91405, France
  • 2King's College London, Strand, London WC2R 2LS, United Kingdom

  • *damien.riedel@u-psud.fr

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Issue

Vol. 86, Iss. 16 — 15 October 2012

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