Electronic properties of the n-doped hydrogenated silicon (100) surface and dehydrogenated structures at 5 K

Amandine Bellec, Damien Riedel, Gérald Dujardin, Ouarda Boudrioua, Laurent Chaput, Louise Stauffer, and Philippe Sonnet
Phys. Rev. B 80, 245434 – Published 23 December 2009

Abstract

We present a comparative study of the electronic properties of the clean Si(100) and the hydrogenated Si(100):H surfaces performed with a low-temperature (5 K) scanning tunneling microscope. Various surface structures such as single silicon dangling bonds and bare silicon dimers created by local desorption of hydrogen atoms from the Si(100):H surface are also investigated. The experimental scanning tunneling spectroscopy (STS) curves acquired locally on each of these structures are compared with STS measurements performed on the Si(100) and Si(100):H surfaces. First principle density-functional theory calculations of the projected local density of states, taking into account the influence of the dopant atoms (As), enable to assign the observed STS spectra.

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  • Received 1 September 2009

DOI:https://doi.org/10.1103/PhysRevB.80.245434

©2009 American Physical Society

Authors & Affiliations

Amandine Bellec*, Damien Riedel, and Gérald Dujardin

  • Laboratoire de Photophysique Moléculaire, CNRS (UPR 3361), Université Paris Sud, Bât. 210, 91405 Orsay, France

Ouarda Boudrioua, Laurent Chaput, Louise Stauffer, and Philippe Sonnet

  • Institut de Science des Matériaux de Mulhouse (IS2M–LRC 7228), Université de Haute-Alsace, 4 rue des frères Lumière, 68093 Mulhouse, France

  • *amandine.bellec@u-psud.fr

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Issue

Vol. 80, Iss. 24 — 15 December 2009

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