Figure 1

(a) $40\times 26{\AA }^2$ STM topography of the Si(100):H surface ($V_s=-1.7\mathrm{V}$, $I=69\mathrm{pA}$). The silicon DB and the H atom are in position $A$ and $B$, respectively (green dots). (b),(c) $40\times 28.5{\AA }^2$ STM topographies of the Si(100):H surface ($V_s=-1.7\mathrm{V}$, $I=70\mathrm{pA}$) before and after a surface voltage pulse at $+2.5\mathrm{V}$ (blue dot), respectively. The created silicon DB is seen in (c). (d),(e) $40\times 28.5{\AA }^2$ STM topographies of the Si(100):H surface ($V_s=-1.7\mathrm{V}$, $I=69\mathrm{pA}$) before and after the hopping of the H atom, respectively. The hopping is activated by applying a $-2.5\mathrm{V}$ voltage pulse while the STM tip is on top of the H atom (red dot). (f) Tunnel current trace recorded during a voltage pulse ($V_s=-2.5\mathrm{V}$) while the STM tip is fixed at the red dot position in (d).Reuse & Permissions

Figure 2

(a) Variation of the number of events (H hopping) as a function of the quantity of charges ($I{t}_{\mathrm{exc}}^{\prime }$) when the STM tip is on top of the H atom ($\mathrm{H}\to \mathrm{DB}$ movement). (b) Variation of the H hopping yield $Y_{\mathrm{H}\to \mathrm{DB}}$ as a function of the tunnel current ($V_s=-2.5\mathrm{V}$) when the STM tip is on top of the H atom. (c) Variations of the hopping yields $Y_{\mathrm{H}\to \mathrm{DB}}$ and $Y_{\mathrm{DB}\to \mathrm{H}}$ of the BA as a function of the surface voltage. (d) Variation of the DOS integrated over the 0–3 eV (green line) and the 2–3 eV (red line) energy ranges (below the Fermi level) as a function of the lateral distance across the dimer rows, calculated 1 Å above the H atoms.Reuse & Permissions

Figure 3

(a) Top view of the first layer of silicon dimers of the Si(100):H surface indicating the 12 positions of hole injection to activate the BA remotely when the tip is either on the H side (red dots, left) or on the DB side (blue dots, right) of the BA. The light gray circles correspond to H atoms and the white circle is the DB. (b),(c) Measured hopping yields for hole injection sites distributed along ($2{\mathrm{H}}_{\parallel }$, $4{\mathrm{H}}_{\parallel }$, $6{\mathrm{H}}_{\parallel }$) or across ($2{\mathrm{H}}_{\perp }$, $4{\mathrm{H}}_{\perp }$, $6{\mathrm{H}}_{\perp }$) the silicon dimer row, respectively. The surface pulse voltage is $-2.5\mathrm{V}$. The red bars and the blue bars correspond to measurements realized when the tip is placed near the H atom or near the DB of the BA, respectively. (d) Variations of the hopping yields of the BA as a function of the surface voltage at the $6{\mathrm{H}}_{\perp }$ and $6{\mathrm{H}}_{\parallel }$ hole injection sites.Reuse & Permissions

Figure 4

(a),(b) Calculated sectional drawings of the LDOS spatial distribution integrated over the $-2.3$ to $-3\mathrm{eV}$ energy range. In (a), the calculated LDOS is the superposition of three planes indicated by the dotted lines in (b). In (b), the LDOS is the superposition of three planes indicated by the dotted lines in (a).Reuse & Permissions