Issue 5, 2012
From the journal:

Physical Chemistry Chemical Physics

The paradox of an insulating contact between a chemisorbed molecule and a wide band gap semiconductor surface

H. Yang,abc   O. Boudrioua,d   A. J. Mayne,*a   G. Comtet,a   G. Dujardin,a   Y. Kuk,c   Ph. Sonnet,d   L. Stauffer,d   S. Nagarajane  and  A. Gourdone  

* Corresponding authors

a Institut des Sciences Moléculaires d'Orsay, CNRS, Université Paris Sud 11, 91405 Orsay, France
E-mail: andrew.mayne@u-psud.fr

b Samsung Advanced Institute of Technology, Giheung-gu, Yongin-si, Gyeonggi-do 446-712, Korea

c Department of Physics and Astronomy, Seoul National University, 151-747 Seoul, Korea

d Institut de Sciences de Matériaux de Mulhouse, CNRS Université de Haute Alsace, 4 rue des Frères Lumière, 68093 Mulhouse, France

e CEMES-CNRS, 29, rue J. Marvig, B.P. 4347, 31055 Toulouse, France

Abstract

Controlling the intrinsic optical and electronic properties of a single molecule adsorbed on a surface requires electronic decoupling of some molecular orbitals from the surface states. Scanning tunneling microscopy experiments and density functional theory calculations are used to study a perylene molecule derivative (DHH-PTCDI), adsorbed on the clean 3 × 3 reconstructed wide band gap silicon carbide surface (SiC(0001)-3 × 3). We find that the LUMO of the adsorbed molecule is invisible in I(V) spectra due to the absence of any surface or bulk states and that the HOMO has a very low saturation current in I(z) spectra. These results present a paradox that the molecular orbitals are electronically isolated from the surface of the wide band gap semiconductor even though strong chemical bonds are formed.

Graphical abstract: The paradox of an insulating contact between a chemisorbed molecule and a wide band gap semiconductor surface

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Article information

DOI
https://doi.org/10.1039/C2CP23104B
Article type
Paper
Submitted
30 Sep 2011
Accepted
01 Dec 2011
First published
21 Dec 2011

Phys. Chem. Chem. Phys., 2012,14, 1700-1705

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The paradox of an insulating contact between a chemisorbed molecule and a wide band gap semiconductor surface

H. Yang, O. Boudrioua, A. J. Mayne, G. Comtet, G. Dujardin, Y. Kuk, Ph. Sonnet, L. Stauffer, S. Nagarajan and A. Gourdon, Phys. Chem. Chem. Phys., 2012, 14, 1700 DOI: 10.1039/C2CP23104B

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