Institution of Engineering and Technology

The IET is a world leading professional organisation sharing and advancing knowledge to promote science, engineering and technology across the world.

Surface passivation of AlN/GaN MOS-HEMTs using ultra-thin Al2O3 formed by thermal oxidation of evaporated aluminium
Taking,S. et al.
Electronics Letters(2010),46(4):301
http://dx.doi.org/10.1049/el.2010.2781

This article is available from multiple sources. Please click on the logo of the service to which you have a subscription, or click any logo to obtain pay-per-view access.

IET Digital Library on Scitation
  Access the IET Digital Library



IEL on IEEE Xplore
  Access the IEL (IEEE/IET Electronic Library) on IEEE Xplore®