Institution of Engineering and Technology

The IET is a world leading professional organisation sharing and advancing knowledge to promote science, engineering and technology across the world.

Physics-based simulation study of high-performance gallium arsenide phosphide–indium gallium arsenide tunnel field-effect transistor
Raad,Bhagwan Ram et al.
Micro & Nano Letters(2016),11(7):366
http://dx.doi.org/10.1049/mnl.2016.0050

This article is available from multiple sources. Please click on the logo of the service to which you have a subscription, or click any logo to obtain pay-per-view access.

IET Digital Library on Scitation
  Access the IET Digital Library



IEL on IEEE Xplore
  Access the IEL (IEEE/IET Electronic Library) on IEEE Xplore®